Kingston KF556C40-16 16GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分

Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异规格评论

差异

Kingston KF556C40-16 16GB

需要考虑的原因
Kingston KF556C40-16 16GB

报告一个错误

更快的写入速度，GB/s

13.0 12.1

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

15.6 14.9

测试中的平均数值

规格

完整的技术规格清单

Kingston KF556C40-16 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

14.9 15.6
写入速度，GB/s

13.0 12.1
内存带宽，mbps

19200 19200

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3458 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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