Kingston KHX1600C9D3/4GX 4GB vs Micron Technology ILG8GS2400A 8GB

总分

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

总分

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

差异规格评论

差异

Kingston KHX1600C9D3/4GX 4GB

需要考虑的原因
Kingston KHX1600C9D3/4GX 4GB

报告一个错误

Micron Technology ILG8GS2400A 8GB

需要考虑的原因
Micron Technology ILG8GS2400A 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更快的读取速度，GB/s

15 14.4

测试中的平均数值
更快的写入速度，GB/s

11.4 8.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/4GX 4GB

Micron Technology ILG8GS2400A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

14.4 15.0
写入速度，GB/s

8.8 11.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2363 2549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Samsung M3 78T5663RZ3-CE6 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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Crucial Technology CT4G4DFS824A.C8FBD2 4GB

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Kingston KHX1600C9D3/4G 4GB

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Ramaxel Technology RMUA5200MJ78HAF-3200 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston X5H5PW-MIE 8GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingston RB26D4U9D8MEH-16 16GB

Kingston RB26D4U9D8MEH-16 16GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB