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Kingston KHX1600C9D3/4GX 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Kingston KHX1600C9D3/4GX 4GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB

总分
star star star star star
Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

差异 规格 评论

差异

Kingston KHX1600C9D3/4GX 4GB 需要考虑的原因
Kingston KHX1600C9D3/4GX 4GB
报告一个错误
Patriot Memory (PDP Systems) 3000 C18 Series 16GB 需要考虑的原因
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 40
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9D3/4GX 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 36
  • 读取速度，GB/s
    14.4 left arrow 15.5
  • 写入速度，GB/s
    8.8 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2363 left arrow 3050

Kingston KHX1600C9D3/4GX 4GB RAM的比较

Kingston 99U5403-050.A00LF 4GB
Kingston 99U5474-036.A00LF 4GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.CAGN4.4020B 8GB
Apacer Technology 78.CAGN4.4020B 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Maxsun MSD48G32Q3 8GB
Maxsun MSD48G32Q3 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Super Talent F24EA8GS 8GB
Super Talent F24EA8GS 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Apacer Technology 78.CAGP7.AZC0B 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-4000C18-16GTRS 16GB
G Skill Intl F4-4000C18-16GTRS 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CM4B8G1J2800K14K 8GB
Corsair CM4B8G1J2800K14K 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Apacer Technology GD2.11173T.001 4GB
Apacer Technology GD2.11173T.001 4GB
内存RAM