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Kingston KHX1600C9D3/8G 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB

Kingston KHX1600C9D3/8G 8GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分
star star star star star
Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异 规格 评论

差异

Kingston KHX1600C9D3/8G 8GB 需要考虑的原因
Kingston KHX1600C9D3/8G 8GB
报告一个错误
Chun Well Technology Holding Limited D4U0826190B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 38
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston KHX1600C9D3/8G 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 29
  • 读取速度，GB/s
    14.7 left arrow 16.7
  • 写入速度，GB/s
    9.1 left arrow 12.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2496 left arrow 3273

Kingston KHX1600C9D3/8G 8GB RAM的比较

Kingston KHX16LC9/8GX 8GB
Kingston 99U5474-028.A00LF 4GB

Chun Well Technology Holding Limited D4U0826190B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
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