Kingston KHX1600C9D3/8G 8GB vs Hyundai Inc AR36C18S8K2HU416R 8GB

总分

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

总分

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

差异规格评论

差异

Kingston KHX1600C9D3/8G 8GB

需要考虑的原因
Kingston KHX1600C9D3/8G 8GB

报告一个错误

Hyundai Inc AR36C18S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR36C18S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 38

左右 -100% 更低的延时
更快的读取速度，GB/s

20 14.7

测试中的平均数值
更快的写入速度，GB/s

17.5 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9D3/8G 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 19
读取速度，GB/s

14.7 20.0
写入速度，GB/s

9.1 17.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2496 3499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X16GE2133C13K8 16GB

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Samsung M471B5773DH0-CK0 2GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Kingston 9965640-016.A00G 32GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Kingston KHX318C10FR/8G 8GB

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Corsair CMD16GX4M2B3600C18 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3733C17-8GTZSW 8GB

G Skill Intl F4-3733C17-8GTZSW 8GB