Kingston KHX1600C9S3L/4G 4GB vs Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

总分

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

总分

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

差异规格评论

差异

Kingston KHX1600C9S3L/4G 4GB

需要考虑的原因
Kingston KHX1600C9S3L/4G 4GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 40

左右 -74% 更低的延时
更快的读取速度，GB/s

16.3 13.1

测试中的平均数值
更快的写入速度，GB/s

10.8 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1600C9S3L/4G 4GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 23
读取速度，GB/s

13.1 16.3
写入速度，GB/s

8.5 10.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2148 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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AMD R538G1601U2S-UO 8GB

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G Skill Intl F4-3600C18-16GTRG 16GB

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DSL Memory D4SS12082SH21A-A 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

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G Skill Intl F4-3200C15-8GVR 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Corsair CMT32GX5M2B5600C36 16GB

Corsair CMT32GX5M2B5600C36 16GB