Kingston KHX1866C9D3/8GX 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Kingston KHX1866C9D3/8GX 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

总分

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

差异规格评论

差异

Kingston KHX1866C9D3/8GX 8GB

需要考虑的原因
Kingston KHX1866C9D3/8GX 8GB

报告一个错误

更快的读取速度，GB/s

15.8 14.8

测试中的平均数值
更快的写入速度，GB/s

10.4 8.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 -44% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KHX1866C9D3/8GX 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 25
读取速度，GB/s

15.8 14.8
写入速度，GB/s

10.4 8.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2751 2542

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C17-8GTZRB 8GB

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Micron Technology 16G2666CL19 16GB

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Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

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G Skill Intl F4-3200C16-8GTRS 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3466C16-8GTZ 8GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB