Kingston KHX2133C11D3/4GX 4GB vs Crucial Technology CT16G4DFS8266.C8FB 16GB

总分

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

差异规格评论

差异

Kingston KHX2133C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB

报告一个错误

Crucial Technology CT16G4DFS8266.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4DFS8266.C8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 -32% 更低的延时
更快的读取速度，GB/s

16.1 15.5

测试中的平均数值
更快的写入速度，GB/s

12.6 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 28
读取速度，GB/s

15.5 16.1
写入速度，GB/s

10.1 12.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2595 3344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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A-DATA Technology DDR2 800G 2GB

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G Skill Intl F4-4000C19-16GTRG 16GB

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Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CM4X16GE2666C18S2 16GB

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G Skill Intl F4-3333C16-8GTZSK 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CMK128GX4M4A2666C16 32GB