Kingston KHX2133C11D3/4GX 4GB vs Crucial Technology CT8G4DFS632A.M4FB 8GB

总分

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分

Crucial Technology CT8G4DFS632A.M4FB 8GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

差异规格评论

差异

Kingston KHX2133C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 10% 更低的延时

Crucial Technology CT8G4DFS632A.M4FB 8GB

需要考虑的原因
Crucial Technology CT8G4DFS632A.M4FB 8GB

报告一个错误

更快的读取速度，GB/s

18 15.5

测试中的平均数值
更快的写入速度，GB/s

11.0 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology CT8G4DFS632A.M4FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 41
读取速度，GB/s

15.5 18.0
写入速度，GB/s

10.1 11.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2595 2813

RAM Latency Calculator

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最新比较

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Crucial Technology BL16G32C16U4R.M16FE1 16GB

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Kingston XW21KG-MIE2 8GB

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Kingston 99U5474-013.A00LF 2GB

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Kingston KF3600C16D4/16GX 16GB

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Micron Technology ILG8GS2400A 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMK16GX4M4B3200C16 4GB

Corsair CMK16GX4M4B3200C16 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB