Kingston KHX2133C11D3/4GX 4GB vs Samsung M378A1K43EB2-CWE 8GB

总分

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

差异规格评论

差异

Kingston KHX2133C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB

报告一个错误

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的读取速度，GB/s

17.6 15.5

测试中的平均数值
更快的写入速度，GB/s

12.0 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston KHX2133C11D3/4GX 4GB

Samsung M378A1K43EB2-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

15.5 17.6
写入速度，GB/s

10.1 12.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2595 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C17-16GSXF 16GB

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SK Hynix HMA81GS6JJR8N-VK 8GB

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Patriot Memory (PDP Systems) PSD44G213341 4GB

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A-DATA Technology AD73I1C1674EV 4GB

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Kingston ACR26D4U9S1KA-4 4GB

Crucial Technology CT102464BD160B.M16 8GB

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Corsair CMSX16GX4M1A2400C16 16GB

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Crucial Technology CT8G4DFD824A.C16FBR2 8GB

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