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Kingston KHX2400C11D3/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Kingston KHX2400C11D3/4GX 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

总分
star star star star star
Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

差异 规格 评论

差异

Kingston KHX2400C11D3/4GX 4GB 需要考虑的原因
Kingston KHX2400C11D3/4GX 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 11.4
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 -30% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 10.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston KHX2400C11D3/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 27
  • 读取速度，GB/s
    16.2 left arrow 11.4
  • 写入速度，GB/s
    10.7 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2726 left arrow 2062

Kingston KHX2400C11D3/4GX 4GB RAM的比较

Kingston KHX1866C10D3/4G 4GB
Crucial Technology BLT8G3D1608DT1TX0. 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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