Kingston KHX2400C11D3/4GX 4GB vs SK Hynix GKE800UD102408-2400 8GB

总分

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

总分

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

差异规格评论

差异

Kingston KHX2400C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2400C11D3/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 3% 更低的延时
更快的读取速度，GB/s

16.2 14.4

测试中的平均数值
更快的写入速度，GB/s

10.7 10.4

测试中的平均数值

SK Hynix GKE800UD102408-2400 8GB

需要考虑的原因
SK Hynix GKE800UD102408-2400 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston KHX2400C11D3/4GX 4GB

SK Hynix GKE800UD102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 36
读取速度，GB/s

16.2 14.4
写入速度，GB/s

10.7 10.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2726 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AD73I1B1672EG 2GB

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Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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SK Hynix HMA82GR7AFR4N-TF 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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SK Hynix HMA82GS6CJR8N-UH 16GB

SK Hynix HMA82GS6CJR8N-UH 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3000C15-8GTZR 8GB

G Skill Intl F4-3000C15-8GTZR 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-3600C19-16GSXKB 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB