Kingston KHX2666C13/16GX 16GB vs G Skill Intl F4-4266C19-8GTZR 8GB

总分

Kingston KHX2666C13/16GX 16GB

Kingston KHX2666C13/16GX 16GB

总分

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

差异规格评论

差异

Kingston KHX2666C13/16GX 16GB

需要考虑的原因
Kingston KHX2666C13/16GX 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-4266C19-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 -7% 更低的延时
更快的读取速度，GB/s

19.4 17.6

测试中的平均数值
更快的写入速度，GB/s

16.3 14.2

测试中的平均数值

规格

完整的技术规格清单

Kingston KHX2666C13/16GX 16GB

G Skill Intl F4-4266C19-8GTZR 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 27
读取速度，GB/s

17.6 19.4
写入速度，GB/s

14.2 16.3
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3524 3827

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Mushkin 99[2/7/4]191[F/T] 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M378A1K43BB2-CTD 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Micron Technology 9ASF51272AZ-2G3B1 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Kingston 9905678-156.A00G 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB

Crucial Technology CT4G4DFS8213.C8FAD1 4GB