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Kingston KHX318C10FR/8G 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Kingston KHX318C10FR/8G 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

总分
star star star star star
Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB

差异 规格 评论

差异

Kingston KHX318C10FR/8G 8GB 需要考虑的原因
Kingston KHX318C10FR/8G 8GB
报告一个错误
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 60
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 5.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
Kingston KHX318C10FR/8G 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 30
  • 读取速度，GB/s
    6.8 left arrow 16.9
  • 写入速度，GB/s
    5.4 left arrow 13.4
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1411 left arrow 3257

Kingston KHX318C10FR/8G 8GB RAM的比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KVR16N11/8-SP 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
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Kingston ACR512X64D3S13C9G 4GB
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Kingston KF3200C18D4/8G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMK8GX4M1D2666C16 8GB
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Samsung M471B5673FH0-CF8 2GB
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Micron Technology 4ATF51264HZ-2G3B1 4GB
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Corsair CM2X2048-6400C5 2GB
Corsair CM2X2048-6400C5 2GB
Corsair CMR16GX4M2A2666C16 8GB
Corsair CMR16GX4M2A2666C16 8GB
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Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
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Crucial Technology CT16G4SFD8213.C16FH1 16GB
内存RAM
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内存RAM
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内存RAM
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Kingston HP26D4U9S8ME-8X 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
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内存RAM
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SK Hynix HMT351U6CFR8C-H9 4GB
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Essencore Limited KD48GU880-36A180X 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
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Kingston 9905701-131.A00G 16GB
内存RAM