Kingston KP223C-ELD 2GB vs Kingston KHX2666C16D4/16GX 16GB

总分

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

总分

Kingston KHX2666C16D4/16GX 16GB

Kingston KHX2666C16D4/16GX 16GB

差异规格评论

差异

Kingston KP223C-ELD 2GB

需要考虑的原因
Kingston KP223C-ELD 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Kingston KHX2666C16D4/16GX 16GB

需要考虑的原因
Kingston KHX2666C16D4/16GX 16GB

报告一个错误

更快的读取速度，GB/s

16.7 13.4

测试中的平均数值
更快的写入速度，GB/s

12.0 8.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KP223C-ELD 2GB

Kingston KHX2666C16D4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

13.4 16.7
写入速度，GB/s

8.8 12.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2137 3308

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8213.C8FH1 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology BLS4G4D26BFSE.8FB 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Apacer Technology 78.C1GQB.4032B 8GB

Apacer Technology 78.C1GQB.4032B 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston EBJ81UG8BBW0-GN-F 8GB

Kingston EBJ81UG8BBW0-GN-F 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB