RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KTC1G-UDIMM 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
比较
Kingston KTC1G-UDIMM 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
总分
Kingston KTC1G-UDIMM 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston KTC1G-UDIMM 1GB
报告一个错误
低于PassMark测试中的延时,ns
61
122
左右 50% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
更快的读取速度,GB/s
9.4
4
测试中的平均数值
更快的写入速度,GB/s
5.8
2,410.6
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Kingston KTC1G-UDIMM 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
61
122
读取速度,GB/s
4,230.0
9.4
写入速度,GB/s
2,410.6
5.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
754
1411
Kingston KTC1G-UDIMM 1GB RAM的比较
Kingston KHX8500D2K2/2GN 1GB
G Skill Intl F4-3200C16-8GTZN 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KTC1G-UDIMM 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
Crucial Technology CT51264AC800.C16FC 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Corsair CM4X16GE2666Z16K4 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston ASU21D4U5S1MB-4 4GB
Qimonda 72T128420EFA3SB2 1GB
G Skill Intl F4-3000C15-4GVSB 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW32GX4M2A2666C16 16GB
Samsung M391B5673FH0-CH9 2GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
Kingston 99U5471-052.A00LF 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
Kingston HX316C10F/8 8GB
G Skill Intl F4-2800C15-8GRBB 8GB
报告一个错误
×
Bug description
Source link