Kingston KVR16N11/8-SP 8GB vs Crucial Technology CT8G4SFS8266.M8FE 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Crucial Technology CT8G4SFS8266.M8FE 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 35

左右 26% 更低的延时

Crucial Technology CT8G4SFS8266.M8FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8266.M8FE 8GB

报告一个错误

更快的读取速度，GB/s

15.4 13.9

测试中的平均数值
更快的写入速度，GB/s

11.2 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 35
读取速度，GB/s

13.9 15.4
写入速度，GB/s

9.5 11.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2432 2676

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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INTENSO 5641162 8GB

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Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-2133C15-8GVK 8GB

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Kingston 9905403-011.A03LF 2GB

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Samsung M391B5673EH1-CH9 2GB

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Essencore Limited KD4AGU880-32A160U 16GB

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Corsair CMV4GX3M1B1600C11 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Samsung M471A4G43BB1-CWE 32GB

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Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

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Kingston 9905469-143.A00LF 4GB

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G Skill Intl F4-3333C16-16GTZB 16GB

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G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB