Kingston KVR16N11/8-SP 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 35% 更低的延时
更快的读取速度，GB/s

13.9 9.1

测试中的平均数值
更快的写入速度，GB/s

9.5 6.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 40
读取速度，GB/s

13.9 9.1
写入速度，GB/s

9.5 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2432 2031

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR512X64D3S13C9G 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Corsair CMR32GX4M4C3000C15 8GB

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Kingston KF2666C15S4/8G 8GB

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Team Group Inc. TEAMGROUP-D4-3600 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M471A5244CB0-CWE 4GB

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G Skill Intl F4-3600C16-8GTRGC 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Corsair CMW16GX4M2Z3200C16 8GB

Corsair CMW16GX4M2Z3200C16 8GB

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Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

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