Kingston KVR16N11/8-SP 8GB vs Team Group Inc. TEAMGROUP-UD4-4300 8GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

Team Group Inc. TEAMGROUP-UD4-4300 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-4300 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 26

左右 -37% 更低的延时
更快的读取速度，GB/s

25.1 13.9

测试中的平均数值
更快的写入速度，GB/s

21.3 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 19
读取速度，GB/s

13.9 25.1
写入速度，GB/s

9.5 21.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2432 4612

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A1K1KBB1-CRC 8GB

Samsung M471A1K1KBB1-CRC 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Kingston 9905701-020.A00G 16GB

Kingston 9905701-020.A00G 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Kingston CBD32D4S2S1ME-8 8GB

Kingston CBD32D4S2S1ME-8 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9905663-005.A00G 16GB

Kingston 9905663-005.A00G 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston 9905702-019.A00G 8GB

Kingston 9905702-019.A00G 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

Micron Technology 16KTF1G64HZ-1G9P1 8GB

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB