Kingston KVR533D2N4 512MB vs Avant Technology J641GU42J5213N0 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Avant Technology J641GU42J5213N0 8GB

需要考虑的原因
Avant Technology J641GU42J5213N0 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 75

左右 -188% 更低的延时
更快的读取速度，GB/s

14.4 1

测试中的平均数值
更快的写入速度，GB/s

9.7 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Avant Technology J641GU42J5213N0 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 26
读取速度，GB/s

1,943.5 14.4
写入速度，GB/s

1,672.1 9.7
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2394

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFD8213.C16FHP 8GB

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Kingston ACR24D4U7D8MB-16 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Mushkin 996902 2GB

Mushkin 996902 2GB

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Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB