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Kingston KVR533D2N4 512MB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Kingston KVR533D2N4 512MB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 75
    左右 -241% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 22
  • 读取速度，GB/s
    1,943.5 left arrow 17.3
  • 写入速度，GB/s
    1,672.1 left arrow 13.7
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3051

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905624-036.A00G 8GB
Kingston 9905624-036.A00G 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3000C15-8GRRB 8GB
G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Kingston KHYXPX-MIE 8GB
Kingston KHYXPX-MIE 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Kingston 9905630-063.A00G 16GB
Kingston 9905630-063.A00G 16GB
内存RAM