Kingston KVR533D2N4 512MB vs Corsair CMD16GX4M2B3733C17 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMD16GX4M2B3733C17 8GB

需要考虑的原因
Corsair CMD16GX4M2B3733C17 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 75

左右 -213% 更低的延时
更快的读取速度，GB/s

17.2 1

测试中的平均数值
更快的写入速度，GB/s

12.4 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMD16GX4M2B3733C17 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 24
读取速度，GB/s

1,943.5 17.2
写入速度，GB/s

1,672.1 12.4
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 3204

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston KHX2666C16/8G 8GB

Kingston KHX2666C16/8G 8GB