Kingston KVR533D2N4 512MB vs Corsair CMK16GX4M2K4266C19 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMK16GX4M2K4266C19 8GB

Corsair CMK16GX4M2K4266C19 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMK16GX4M2K4266C19 8GB

需要考虑的原因
Corsair CMK16GX4M2K4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 75

左右 -341% 更低的延时
更快的读取速度，GB/s

20.9 1

测试中的平均数值
更快的写入速度，GB/s

18.1 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMK16GX4M2K4266C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 17
读取速度，GB/s

1,943.5 20.9
写入速度，GB/s

1,672.1 18.1
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 3863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMU64GX4M4C3200C16 16GB

Corsair CMU64GX4M4C3200C16 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMK16GX4M2K4266C19 8GB

Corsair CMK16GX4M2K4266C19 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M393A2G40EB1-CPB 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3300C16-8GTZKW 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB

AMD R332G1339U1S 2GB

AMD R332G1339U1S 2GB

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

Samsung M393B1K70QB0-YK0 8GB

Samsung M393B1K70QB0-YK0 8GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3200C14-8GTZN 8GB

G Skill Intl F4-3200C14-8GTZN 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Corsair CMK16GX4M2K4133C19 8GB

Corsair CMK16GX4M2K4133C19 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMW32GX4M2C3200C16 16GB

Corsair CMW32GX4M2C3200C16 16GB