Kingston KVR533D2N4 512MB vs Corsair CMSO16GX4M2A2133C15 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMSO16GX4M2A2133C15 8GB

Corsair CMSO16GX4M2A2133C15 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMSO16GX4M2A2133C15 8GB

需要考虑的原因
Corsair CMSO16GX4M2A2133C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 75

左右 -114% 更低的延时
更快的读取速度，GB/s

14.2 1

测试中的平均数值
更快的写入速度，GB/s

10.5 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMSO16GX4M2A2133C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 35
读取速度，GB/s

1,943.5 14.2
写入速度，GB/s

1,672.1 10.5
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology BL16G26C16S4B.16FD 16GB

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Mushkin MR[A/B]4U300JJJM16G 16GB

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Kingston HP669238-071-HYC 4GB

Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

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Corsair CMX8GX3M2A1600C11 4GB

Corsair CMSX64GX4M2A2933C19 32GB

Corsair CMSX64GX4M2A2933C19 32GB

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SK Hynix HMT41GS6AFR8A-PB 8GB

Corsair CMK16GX4M4C3200C16 4GB

Corsair CMK16GX4M4C3200C16 4GB