Kingston KVR533D2N4 512MB vs Corsair CMW32GX4M4C3600C18 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Corsair CMW32GX4M4C3600C18 8GB

Corsair CMW32GX4M4C3600C18 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Corsair CMW32GX4M4C3600C18 8GB

需要考虑的原因
Corsair CMW32GX4M4C3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 75

左右 -159% 更低的延时
更快的读取速度，GB/s

18.7 1

测试中的平均数值
更快的写入速度，GB/s

15.9 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Corsair CMW32GX4M4C3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 29
读取速度，GB/s

1,943.5 18.7
写入速度，GB/s

1,672.1 15.9
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 3756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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SK Hynix HMA82GR7JJR8N-VK 16GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Kingston 99U5469-045.A00LF 4GB

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Crucial Technology BLS8G4D240FSE.16FBD2 8GB

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Kingston 9905471-001.A01LF 2GB

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Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

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Kingston 9965525-155.A00LF 8GB

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Essencore Limited KD4AGSA8A-32N2200 16GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston KHX3333C16D4/16GX 16GB

Kingston KHX3333C16D4/16GX 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CMWX16GC3600C18W2D 16GB

Corsair CMWX16GC3600C18W2D 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Apacer Technology 78.C1GQ5.C7C0B 8GB