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Kingston KVR533D2N4 512MB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Kingston KVR533D2N4 512MB vs Crucial Technology CT8G4SFD8213.C16FBD1 8GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Crucial Technology CT8G4SFD8213.C16FBD1 8GB 需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 75
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 36
  • 读取速度，GB/s
    1,943.5 left arrow 14.0
  • 写入速度，GB/s
    1,672.1 left arrow 10.1
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    301 left arrow 2416

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
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Samsung M471A4G43BB1-CWE 32GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
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Samsung M3 78T3354BZ0-CCC 256MB
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