Kingston KVR533D2N4 512MB vs Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 75

左右 -134% 更低的延时
更快的读取速度，GB/s

22.6 1

测试中的平均数值
更快的写入速度，GB/s

16.4 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 32
读取速度，GB/s

1,943.5 22.6
写入速度，GB/s

1,672.1 16.4
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 3837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X8GF2400C16S4 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Crucial Technology BL8G32C16U4R.M8FE 8GB

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Micron Technology 16ATF4G64HZ-2G6B4 32GB

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Corsair CMD8GX3M2A2933C12 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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PNY Electronics PNY 2GB

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Micron Technology 18ADF2G72AZ-2G6E1 16GB

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Team Group Inc. TEAMGROUP-SD4-2666 16GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB

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Samsung M393B1K70QB0-CK0 8GB

Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Corsair CM4X8GD3200C16K4 8GB

Corsair CM4X8GD3200C16K4 8GB

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Samsung M393B2G70BH0-CK0 16GB

King Tiger Technology TMKG8G3000C17(XMP) 8GB

King Tiger Technology TMKG8G3000C17(XMP) 8GB