Kingston KVR533D2N4 512MB vs Panram International Corporation W4U2133PS-8G 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Panram International Corporation W4U2133PS-8G 8GB

Panram International Corporation W4U2133PS-8G 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Panram International Corporation W4U2133PS-8G 8GB

需要考虑的原因
Panram International Corporation W4U2133PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 75

左右 -213% 更低的延时
更快的读取速度，GB/s

15.6 1

测试中的平均数值
更快的写入速度，GB/s

11.3 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Panram International Corporation W4U2133PS-8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 24
读取速度，GB/s

1,943.5 15.6
写入速度，GB/s

1,672.1 11.3
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 2767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX4GX3M1A1600C9 4GB

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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

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Samsung M393A2K40BB1-CRC 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

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Samsung M395T2863QZ4-CF76 1GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK16GX4M2Z2666C16 8GB

Corsair CMK16GX4M2Z2666C16 8GB