Kingston KVR533D2N4 512MB vs Samsung M391A1G43EB1-CRC 8GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

低于PassMark测试中的延时，ns

75 77

左右 3% 更低的延时

Samsung M391A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M391A1G43EB1-CRC 8GB

报告一个错误

更快的读取速度，GB/s

13.6 1

测试中的平均数值
更快的写入速度，GB/s

6.9 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Samsung M391A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 77
读取速度，GB/s

1,943.5 13.6
写入速度，GB/s

1,672.1 6.9
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 1549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology BL16G30C15U4B.16FE 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston 9905734-073.A00G 16GB

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