Kingston KVR533D2N4 512MB vs Samsung M471A2K43CB1-CTCT 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Samsung M471A2K43CB1-CTCT 16GB

需要考虑的原因
Samsung M471A2K43CB1-CTCT 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 75

左右 -134% 更低的延时
更快的读取速度，GB/s

15.9 1

测试中的平均数值
更快的写入速度，GB/s

7.9 1,672.1

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Samsung M471A2K43CB1-CTCT 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 32
读取速度，GB/s

1,943.5 15.9
写入速度，GB/s

1,672.1 7.9
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

301 2322

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M2C3200C18 16GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Ramaxel Technology RMSA3270MB86H9F2400 4GB

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Kingston 99U5474-028.A00LF 4GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMR128GX4M8Z2933C16 16GB

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Corsair CML16GX3M2A1600C10 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CM4X8GF2400Z16K4 8GB

Corsair CM4X8GF2400Z16K4 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Corsair CMU32GX4M2A2666C16 16GB

Corsair CMU32GX4M2A2666C16 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB