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Kingston KVR800D2N6/2G 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Kingston KVR800D2N6/2G 2GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 19.4
    测试中的平均数值
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB 需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 50
    左右 -56% 更低的延时
  • 更快的写入速度，GB/s
    16.3 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 32
  • 读取速度，GB/s
    5,143.3 left arrow 19.4
  • 写入速度，GB/s
    1,905.1 left arrow 16.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3726

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
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Crucial Technology BLS8G4D30AESCK.M8FE 8GB
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SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
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Crucial Technology CT16G4DFD832A.M16FJ 16GB
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Kingston 9905471-076.A00LF 8GB
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Kingston 9965662-016.A00G 16GB
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AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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Crucial Technology BL16G32C16U4B.M8FB1 16GB
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G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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PNY Electronics PNY 2GB
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Micron Technology 16G3200CL22 16GB
内存RAM
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Kingston 99U5471-030.A00LF 8GB
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Team Group Inc. TEAMGROUP-UD4-4000 4GB
内存RAM
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Crucial Technology BLE4G4D26AFEA.8FBD 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905744-077.A00G 16GB
Kingston 9905744-077.A00G 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
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Kingston 9965589-008.D01G 8GB
内存RAM