Kingston KVR800D2N6/2G 2GB vs Corsair CM4X4GF2400C16N2 4GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

低于PassMark测试中的延时，ns

50 76

左右 34% 更低的延时
更快的读取速度，GB/s

5 13.5

测试中的平均数值

Corsair CM4X4GF2400C16N2 4GB

需要考虑的原因
Corsair CM4X4GF2400C16N2 4GB

报告一个错误

更快的写入速度，GB/s

7.3 1,905.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Corsair CM4X4GF2400C16N2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 76
读取速度，GB/s

5,143.3 13.5
写入速度，GB/s

1,905.1 7.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

855 1587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Team Group Inc. TEAMGROUP-Ind-2666 8GB

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Kingston 9905702-019.A00G 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

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Samsung V-GeN D4S8GL26A8TL5 8GB

Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology CT16G4DFRA32A.C16FN 16GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB