Kingston KVT8FP-HYC 4GB vs Kingston ASU21D4U5S1MB-4 4GB

总分

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

总分

Kingston ASU21D4U5S1MB-4 4GB

Kingston ASU21D4U5S1MB-4 4GB

差异规格评论

差异

Kingston KVT8FP-HYC 4GB

需要考虑的原因
Kingston KVT8FP-HYC 4GB

报告一个错误

更快的读取速度，GB/s

14.4 12.7

测试中的平均数值
更快的写入速度，GB/s

9.6 9.0

测试中的平均数值

Kingston ASU21D4U5S1MB-4 4GB

需要考虑的原因
Kingston ASU21D4U5S1MB-4 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 -48% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston KVT8FP-HYC 4GB

Kingston ASU21D4U5S1MB-4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 27
读取速度，GB/s

14.4 12.7
写入速度，GB/s

9.6 9.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2432 2071

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation T 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Samsung M471B1G73DB0-YK0 8GB

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Crucial Technology CT8G4DFD8213.C16FAR2 8GB

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Mushkin 991586 2GB

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Corsair CMK16GX4M2A2400C14 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Hynix Semiconductor (Hyundai Electronics) HMT351S6

Panram International Corporation D4N2666PS-16G 16GB

Panram International Corporation D4N2666PS-16G 16GB

Strontium SRP2G86U1-S6M 2GB

Strontium SRP2G86U1-S6M 2GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB