Lexar Co Limited LD4AU016G-H3200GST 16GB vs Corsair CMSX8GX4M2A2400C16 4GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Corsair CMSX8GX4M2A2400C16 4GB

Corsair CMSX8GX4M2A2400C16 4GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 15.1

测试中的平均数值
更快的写入速度，GB/s

12.5 10.7

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Corsair CMSX8GX4M2A2400C16 4GB

需要考虑的原因
Corsair CMSX8GX4M2A2400C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 -32% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMSX8GX4M2A2400C16 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 25
读取速度，GB/s

17.8 15.1
写入速度，GB/s

12.5 10.7
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3285 2310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ADF2G72AZ-2G6E1 16GB

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Kingston HP698651-154-MCN 8GB

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Kingston X0N6VG-HYD2 16GB

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Corsair CMZ32GX3M4A1866C9 8GB

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Essencore Limited IM48GU48N28-GGGHM 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M391A1G43DB0-CPB 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3200C15-8GTZ 8GB

G Skill Intl F4-3200C15-8GTZ 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMH32GX4M2E3200C16 16GB

Corsair CMH32GX4M2E3200C16 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Corsair CM4X16GE2666C18S4 16GB

Corsair CM4X16GE2666C18S4 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB