Lexar Co Limited LD4AU016G-H3200GST 16GB vs Patriot Memory (PDP Systems) 2400 C16 Series 16GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

17.8 15.6

测试中的平均数值
更快的写入速度，GB/s

12.5 10.6

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

需要考虑的原因
Patriot Memory (PDP Systems) 2400 C16 Series 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

17.8 15.6
写入速度，GB/s

12.5 10.6
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3285 2837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-3333C16-4GRKD 4GB

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Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFD832A.M16FJ 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Samsung M391B5673EH1-CH9 2GB

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Micron Technology 8ATF2G64AZ-3G2E1 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-4000C16-16GTZRA 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Samsung M471B5273CH0-CH9 4GB

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Crucial Technology CT8G4SFRA32A.M8FR 8GB

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Kingston KF3600C18D4/32GX 32GB

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Kingston 9965433-034.A00LF 4GB

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Crucial Technology CT16G4DFD824A.C16FBR 16GB

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Samsung M378B5173BH0-CH9 4GB

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OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB