Micron Technology 16HTF25664AY-800E1 2GB vs A-DATA Technology AD4S3200316G22-BHYD 16GB

总分

Micron Technology 16HTF25664AY-800E1 2GB

Micron Technology 16HTF25664AY-800E1 2GB

总分

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

差异规格评论

差异

Micron Technology 16HTF25664AY-800E1 2GB

需要考虑的原因
Micron Technology 16HTF25664AY-800E1 2GB

报告一个错误

低于PassMark测试中的延时，ns

61 66

左右 8% 更低的延时
更快的读取速度，GB/s

4 13.9

测试中的平均数值
更快的写入速度，GB/s

2,225.6 13.2

测试中的平均数值

A-DATA Technology AD4S3200316G22-BHYD 16GB

需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Micron Technology 16HTF25664AY-800E1 2GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 66
读取速度，GB/s

4,369.2 13.9
写入速度，GB/s

2,225.6 13.2
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

752 2429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston HP26D4S9D8MJ-16 16GB

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Samsung M471B5773DH0-CH9 2GB

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Crucial Technology CT4G4DFS8266.M8FG 4GB

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