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Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMU32GX4M4A2666C16 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Corsair CMU32GX4M4A2666C16 8GB

总分
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分
star star star star star
Corsair CMU32GX4M4A2666C16 8GB

Corsair CMU32GX4M4A2666C16 8GB

差异 规格 评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB 需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB
报告一个错误
Corsair CMU32GX4M4A2666C16 8GB 需要考虑的原因
Corsair CMU32GX4M4A2666C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 10.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMU32GX4M4A2666C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 28
  • 读取速度，GB/s
    10.5 left arrow 17.7
  • 写入速度，GB/s
    7.1 left arrow 14.0
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1425 left arrow 3428

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM的比较

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Corsair CMU32GX4M4A2666C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston XK2M26-MIE 16GB
Kingston XK2M26-MIE 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
Kingston ACR16D3LU1KNG/4G 4GB
Kingston ACR16D3LU1KNG/4G 4GB
Apacer Technology 78.D1GS7.B7B0B 16GB
Apacer Technology 78.D1GS7.B7B0B 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C18-32GTZN 32GB
G Skill Intl F4-3600C18-32GTZN 32GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3200C16-16GTZ 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston HX424C15PB/4 4GB
Kingston HX424C15PB/4 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
内存RAM
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK32GX4M2B3000C15 16GB
Corsair CMK32GX4M2B3000C15 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
INTENSO M418039 8GB
INTENSO M418039 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
内存RAM