Micron Technology 16JSF25664HZ-1G1F1 2GB vs Micron Technology AFLD48EH1P 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Micron Technology AFLD48EH1P 8GB

Micron Technology AFLD48EH1P 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 33% 更低的延时

Micron Technology AFLD48EH1P 8GB

需要考虑的原因
Micron Technology AFLD48EH1P 8GB

报告一个错误

更快的读取速度，GB/s

16.1 10.5

测试中的平均数值
更快的写入速度，GB/s

10.7 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology AFLD48EH1P 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 43
读取速度，GB/s

10.5 16.1
写入速度，GB/s

7.1 10.7
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1425 2928

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation PUD43000C158G2NJK 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology AFLD48EH1P 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology BL8G30C15U4WL.M8FE1 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston XVTW4H-MIE 32GB

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Kingston CBD24D4S7S8MB-8 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingmax Semiconductor GSJF62F-DA---------- 4GB

Avant Technology F6451U64F9333G 4GB

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Samsung M393A1G40EB1-CPB 8GB

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Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

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Qimonda 72T128420EFA3SB2 1GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB