Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung M471A4G43AB1-CWE 32GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 36% 更低的延时

Samsung M471A4G43AB1-CWE 32GB

需要考虑的原因
Samsung M471A4G43AB1-CWE 32GB

报告一个错误

更快的读取速度，GB/s

15.6 10.5

测试中的平均数值
更快的写入速度，GB/s

12.8 7.1

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M471A4G43AB1-CWE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 45
读取速度，GB/s

10.5 15.6
写入速度，GB/s

7.1 12.8
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1425 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9965589-043.E00G 16GB

Kingston 9965589-043.E00G 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

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Crucial Technology BL8G30C15U4W.M8FE1 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

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Apacer Technology 78.C1GET.AU10C 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240