Micron Technology 16JSF25664HZ-1G1F1 2GB vs SK Hynix HMA81GS6CJR8N-UH 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

更快的写入速度，GB/s

7.1 6.8

测试中的平均数值

SK Hynix HMA81GS6CJR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GS6CJR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 -16% 更低的延时
更快的读取速度，GB/s

14.6 10.5

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

SK Hynix HMA81GS6CJR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 25
读取速度，GB/s

10.5 14.6
写入速度，GB/s

7.1 6.8
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1425 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Strontium EVMT8G1600U86S 8GB

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Cortus SAS 8ATF1G64AZ-2G6E1 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9905471-002.A00LF 2GB

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Corsair CMW128GX4M4D3600C18 32GB

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Kingston 9965516-112.A00LF 16GB

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G Skill Intl F4-3600C18-16GVK 16GB

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Corsair CMK16GX4M2B3200C14 8GB

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Kingston 9905469-143.A00LF 4GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9965525-155.A00LF 8GB

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Corsair CMT64GX4M8X3000C15 8GB

Corsair CMT64GX4M8X3000C15 8GB

Samsung M391B5273DH0-YK0 4GB

Samsung M391B5273DH0-YK0 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMK8GX4M2B3733C17 4GB

Corsair CMK8GX4M2B3733C17 4GB