Micron Technology 16JSF25664HZ-1G1F1 2GB vs Wilk Elektronik S.A. GR2133S464L15/8G 8GB

总分

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

总分

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

差异规格评论

差异

Micron Technology 16JSF25664HZ-1G1F1 2GB

需要考虑的原因
Micron Technology 16JSF25664HZ-1G1F1 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 19% 更低的延时

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. GR2133S464L15/8G 8GB

报告一个错误

更快的读取速度，GB/s

14.8 10.5

测试中的平均数值
更快的写入速度，GB/s

11.5 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JSF25664HZ-1G1F1 2GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 36
读取速度，GB/s

10.5 14.8
写入速度，GB/s

7.1 11.5
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1425 2564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

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Kingston 99U5595-005.A00LF 2GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Corsair CMD64GX4M8A2800C16 8GB

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Samsung M471B5273DH0-CH9 4GB

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Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMT128GX4M8X3600C18 16GB

Corsair CMT128GX4M8X3600C18 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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AMD AE34G1601U1 4GB

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Transcend Information JM2666HSB-8G 8GB

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