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Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2400C17-8GIS 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs G Skill Intl F4-2400C17-8GIS 8GB

总分
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
G Skill Intl F4-2400C17-8GIS 8GB

G Skill Intl F4-2400C17-8GIS 8GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
G Skill Intl F4-2400C17-8GIS 8GB 需要考虑的原因
G Skill Intl F4-2400C17-8GIS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 40
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2400C17-8GIS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 31
  • 读取速度，GB/s
    13.6 left arrow 15.8
  • 写入速度，GB/s
    8.3 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 2865

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

G Skill Intl F4-2400C17-8GIS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2400C17-8GIS 8GB
G Skill Intl F4-2400C17-8GIS 8GB
内存RAM
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX3000C16/16GX 16GB
Kingston KHX3000C16/16GX 16GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Corsair CMK8GX4M2B4266C19 4GB
Corsair CMK8GX4M2B4266C19 4GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA82GS7AFR8N-UH 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMK8GX4M2B3600C18 4GB
Corsair CMK8GX4M2B3600C18 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Corsair CMD8GX4M2B3200C16 4GB
Corsair CMD8GX4M2B3200C16 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Golden Empire CL17-17-17 D4-2400 16GB
Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston KHX2133C14/8G 8GB
Kingston KHX2133C14/8G 8GB
内存RAM