Micron Technology 16JTF25664AZ-1G4F1 2GB vs Kingston KHX3000C15D4/4GX 4GB

总分

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分

Kingston KHX3000C15D4/4GX 4GB

Kingston KHX3000C15D4/4GX 4GB

差异规格评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB

需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB

报告一个错误

Kingston KHX3000C15D4/4GX 4GB

需要考虑的原因
Kingston KHX3000C15D4/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 40

左右 -21% 更低的延时
更快的读取速度，GB/s

16.5 13.6

测试中的平均数值
更快的写入速度，GB/s

12.7 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 16JTF25664AZ-1G4F1 2GB

Kingston KHX3000C15D4/4GX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 33
读取速度，GB/s

13.6 16.5
写入速度，GB/s

8.3 12.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2035 3077

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Crucial Technology BLS8G4D240FSC.M16FAD 8GB

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PNY Electronics PNY 2GB

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Corsair CMW32GX4M4D3600C16 8GB

AMD AE34G1601U1 4GB

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Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK32GX4M4D3000C16 8GB

Corsair CMK32GX4M4D3000C16 8GB