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Micron Technology 16JTF25664AZ-1G4F1 2GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs Patriot Memory (PDP Systems) 2400 C15 Series 4GB

总分
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

差异 规格 评论

差异

Micron Technology 16JTF25664AZ-1G4F1 2GB 需要考虑的原因
Micron Technology 16JTF25664AZ-1G4F1 2GB
报告一个错误
Patriot Memory (PDP Systems) 2400 C15 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 40
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Micron Technology 16JTF25664AZ-1G4F1 2GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 32
  • 读取速度，GB/s
    13.6 left arrow 15.7
  • 写入速度，GB/s
    8.3 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2035 left arrow 2854

Micron Technology 16JTF25664AZ-1G4F1 2GB RAM的比较

Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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Heoriady HX2666DT8G-TD 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston MSI24D4S7S7MH-16 16GB
Kingston MSI24D4S7S7MH-16 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
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Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
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Patriot Memory (PDP Systems) PSD432G32002 32GB
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Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3600C19-16GSXWB 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
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Kingston 9905700-024.A00G 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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Kingston 9905678-138.A00G 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Terabyte Co Ltd RCX2-16G3000R 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9965640-006.A01G 32GB
Kingston 9965640-006.A01G 32GB
内存RAM
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
内存RAM