Micron Technology 18HTF12872AY-800F1 1GB vs Apacer Technology 78.B1GN3.4032B 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Apacer Technology 78.B1GN3.4032B 4GB

Apacer Technology 78.B1GN3.4032B 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

低于PassMark测试中的延时，ns

58 79

左右 27% 更低的延时
更快的读取速度，GB/s

4 13.9

测试中的平均数值

Apacer Technology 78.B1GN3.4032B 4GB

需要考虑的原因
Apacer Technology 78.B1GN3.4032B 4GB

报告一个错误

更快的写入速度，GB/s

7.8 2,107.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Apacer Technology 78.B1GN3.4032B 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 79
读取速度，GB/s

4,025.3 13.9
写入速度，GB/s

2,107.0 7.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 1664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18HTF12872AY-800F1 1GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

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G Skill Intl F4-2400C15-4GVR 4GB

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Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Apacer Technology 78.DAGNN.4030B 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB