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Micron Technology 18HTF12872AY-800F1 1GB
Apacer Technology GD2.0927WH.001 8GB

Micron Technology 18HTF12872AY-800F1 1GB vs Apacer Technology GD2.0927WH.001 8GB

总分
star star star star star
Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分
star star star star star
Apacer Technology GD2.0927WH.001 8GB

Apacer Technology GD2.0927WH.001 8GB

差异 规格 评论

差异

Micron Technology 18HTF12872AY-800F1 1GB 需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    58 left arrow 71
    左右 18% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15.4
    测试中的平均数值
Apacer Technology GD2.0927WH.001 8GB 需要考虑的原因
Apacer Technology GD2.0927WH.001 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.0 left arrow 2,107.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Micron Technology 18HTF12872AY-800F1 1GB
Apacer Technology GD2.0927WH.001 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 71
  • 读取速度，GB/s
    4,025.3 left arrow 15.4
  • 写入速度，GB/s
    2,107.0 left arrow 8.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    670 left arrow 1916

Micron Technology 18HTF12872AY-800F1 1GB RAM的比较

Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

Apacer Technology GD2.0927WH.001 8GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
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Samsung M471B5173QH0-YK0 4GB
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Apacer Technology 78.C2GFL.C720B 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
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内存RAM
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Avant Technology J644GU44J9266NF 32GB
内存RAM
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Corsair CMW32GX4M4D3600C16 8GB
内存RAM
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Samsung M3 78T6553CZ3-CD5 512MB
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Crucial Technology BL16G32C16S4B.8FB 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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G Skill Intl F4-2400C17-8GFT 8GB
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