Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-2400C15-8GVS 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 16.5

测试中的平均数值
更快的写入速度，GB/s

2,107.0 12.0

测试中的平均数值

G Skill Intl F4-2400C15-8GVS 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GVS 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 58

左右 -81% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2400C15-8GVS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 32
读取速度，GB/s

4,025.3 16.5
写入速度，GB/s

2,107.0 12.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Corsair CMK64GX5M2B5200C40 32GB

Corsair CMK64GX5M2B5200C40 32GB

G Skill Intl F4-4800C18-8GTRS 8GB

G Skill Intl F4-4800C18-8GTRS 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB