Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-3000C15-4GRR 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15

测试中的平均数值
更快的写入速度，GB/s

2,107.0 12.0

测试中的平均数值

G Skill Intl F4-3000C15-4GRR 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GRR 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 58

左右 -61% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-3000C15-4GRR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 36
读取速度，GB/s

4,025.3 15.0
写入速度，GB/s

2,107.0 12.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2946

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 2GB-DDR2 800Mhz 2GB

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Micron Technology 8ATF1G64AZ-3G2J1 8GB

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Transcend Information TS1GSH64V4B 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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AMD R538G1601U2S-UO 8GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Teikon TMA81GU6AFR8N-UHSC 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

Kingston ACR512X64D3S13C9G 4GB

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Corsair CMSX8GX4M2A2400C16 4GB

Corsair CMSX8GX4M2A2400C16 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB