Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M471A2K43DB1-CTD 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15.2

测试中的平均数值
更快的写入速度，GB/s

2,107.0 10.7

测试中的平均数值

Samsung M471A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 58

左右 -66% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M471A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 35
读取速度，GB/s

4,025.3 15.2
写入速度，GB/s

2,107.0 10.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

670 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSC.16FD2 8GB

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Kingston 9905599-020.A00G 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Crucial Technology CB16GS2666.C8ET 16GB

Crucial Technology CB16GS2666.C8ET 16GB

Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-3200C16-4GRKD 4GB

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Samsung M378B5673FH0-CH9 2GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB

Crucial Technology BLS8G4D32AESCK.M8FE1 8GB