Micron Technology 18HTF12872AY-800F1 1GB vs SK Hynix HMA41GS6AFR8N-TF 8GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值
更快的写入速度，GB/s

2,107.0 10.2

测试中的平均数值

SK Hynix HMA41GS6AFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GS6AFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 58

左右 -49% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

SK Hynix HMA41GS6AFR8N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 39
读取速度，GB/s

4,025.3 13.7
写入速度，GB/s

2,107.0 10.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

670 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M1Z3600C18 8GB

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Samsung M471B1G73EB0-YK0 8GB

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Gloway International (HK) STKD4GAM2133-F 8GB

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Kingston KHX2400C15/16G 16GB

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Samsung M471B1G73QH0-YK0 8GB

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Samsung M393A2K43CB1-CRC 16GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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Corsair CM4X16GC3600C18K2D 16GB

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AMD AE34G1601U1 4GB

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Corsair CMK128GX4M8B3200C16 16GB

Corsair CMK128GX4M8B3200C16 16GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Apacer Technology 78.BAGM6.40C0B 4GB

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Kingston KVR16N11/8-SP 8GB

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Kingston MSI26D4S9S8HJ-8 8GB

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Kingston 99U5584-010.A00LF 4GB

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Apacer Technology 78.CAGMR.ARC0B 8GB

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